Hermetically Sealed Implant Sensors With Vertical Stacking Architecture

ABSTRACT

The present invention describes vertically stacked and hermetically sealed implantable pressure sensor devices for measuring a physiological signal. The implantable device comprises multiple layers, including a first wafer having a pressure sensor configured to measure the physiological signal and a second wafer having at least a digitizing integrated circuit. The first wafer is vertically stacked or disposed over the second wafer so as to form a hermetic seal. The device may include one or more additional layers adapted for energy storage and transfer, such as a third layer having a super-capacitor and a fourth layer having a thin film battery.

CROSS-REFERENCES TO RELATED APPLICATIONS

The present application is a Continuation of U.S. patent applicationSer. No. 14/789,839 filed Jul. 1, 2015 (Allowed); which claims thebenefit of priority to U.S. Provisional Appin No. 62/019,841 filed Jul.1, 2014, the disclosures which are incorporated herein by reference intheir entirety for all purposes.

The present application is related to co-assigned U.S. Pat. No.10,213,107 which was filed on Jul. 1, 2015; and U.S. Publn No.2016/0058324 which was also filed Jul. 1, 2015, the disclosures whichare also incorporated herein by reference in their entirety for allpurposes.

BACKGROUND OF THE INVENTION

Glaucoma is associated with elevated levels of intraocular pressure(IOP) and can permanently damage vision in the affected eye(s) and leadto irreversible blindness if left untreated. Glaucoma is due to damageof the optic nerve due to increased fluid pressure in the eye.Currently, about 60 million people worldwide suffer from glaucoma, withthat estimate expected to rise to about 80 million people in 2020. Inthe United States alone, there are about 2.2 million patients withglaucoma resulting in approximately 10 million physician visits eachyear and health care costs of about 1.5 billion dollars annually.

In many instances, glaucoma related vision impairments can be preventedif diagnosed and treated in the early stages of disease progression oreven before the onset of glaucoma (i.e., pre-glaucoma patients). Becauseglaucoma is usually associated with an increase in IOP, primary openangle glaucoma and normal tension glaucoma being dominant variations ofthe disease, periodic testing can be used to monitor glaucoma in orderto prevent vision loss. Conventional standard of care requires a patientto visit an eye clinic four to six times a year for non-invasivemeasurement of the patient's IOP, such as tonometry. While tonometrytechniques are generally low cost, easy, and non-invasive, a number ofdifferent types of errors can significantly reduce the accuracy of thisdiagnostic tool and as such potentially result in inappropriatediagnosis and/or ineffective follow-up medical treatment.

For example, at least some of these non-invasive clinical techniques maynot detect elevated IOP levels (e.g., pressure spikes) as only a singlepoint measurement is taken during an eye exam. Failure to continuouslyand/or frequently monitor IOP levels outside the eye clinic (e.g., morethan four to six measurements per year) may lead to inaccurate detectionof the patient's real IOP profile (e.g., real IOP may be higher or lowerthan measured IOP). Non-invasive measurements in some instances alsolack accuracy as these devices measure pressure of the eye with anexternal sensor that provides an indirect measurement of the actualpressure inside the eye. For example, factors that affect accuracy mayinclude failure to account for anatomical differences, such as apatient's cornea thickness, scleral rigidity, or conical curvature,variances due to operator's use or technique, physiological influences,such as as caffeine or alcohol use, or prior refractive surgery that mayaffect a patient's IOP, etc. Hence, the indirect TOP measurements fromsuch non-invasive devices may differ from the actual IOP inside the eye(e.g., overestimated or underestimated) which may lead to inappropriatediagnosis and/or follow-up treatment. Further, it often inconvenient andunpractical for patients to visit the eye clinic on a strict regularschedule for IOP measurement.

Although implantable IOP devices have been proposed for direct IOPmeasurements on a daily basis, these first generation implants may alsosuffer from several drawbacks which in turn may result in indirectand/or inaccurate measurement of IOP and inappropriate medical treatmentof glaucoma. For example, the IOP devices may be too large or bulky indimension, size or shape to be safely and effectively placed entirelywithin a desired location or structure of the eye for direct measurementof IOP. Further, some devices may be extremely invasive, requiring majorsurgery for implantation and/or complicated positioning of multiplecomponents which are each implanted in different structures or areas ofthe eye, which unnecessarily increases patient risk and/or injury andtotal healthcare costs.

Further, some IOP implantable devices may utilize pressure ports whichare susceptible to sensing inaccuracies or require direct implantationwithin certain anatomical locations, such as the anterior chamber,posterior chamber, suprachoroidal space, or cornea of the eye which maylead to unanticipated complications. Also, some of these devices may notbe well suited for chronic implantation due to IOP implant design issuesof water ingress and/or thermal stress (e.g., associated with polymerpackaging), which in turn precludes continuous monitoring of IOP. Suchproposed flexible sensors also have issued of degraded stability. Insome instances, some IOP devices also suffer from poor calibrationand/or monitoring is not adjustable so as to further result ininaccurate IOP detection levels.

Accordingly, it would be desirable to provide improved implant devicesand methods of implantation that overcome at least some the abovementioned shortcomings. In particular, it would be desirable to developultra-miniature implantable IOP devices that accurately, continuously,and adjustably monitor IOP levels. Ideally, such devices should directlymeasure IOP pressure levels and can be safely and effectively implantedentirely within a desired location within the eye quickly and easily inan outpatient environment, such as the physician's office, withoutinvasive major surgery. Further, such devices should allow for chronicimplantation so as to provide long-term stable and continuous IOPmeasurement profiles for appropriate diagnosis and follow-up therapy.

BRIEF SUMMARY OF THE INVENTION

Embodiments of the present invention provide improved micro-electricalmechanical system (MEMS) based pressure sensor implants for the accuratemeasurement of physiological signals, such as IOP, on a continuous orfrequent basis for appropriate treatment of glaucoma. A particularadvantage of the present invention is the implant architecture designand construction which allows the implant form factor (e.g., dimension,size, shape, volume, etc.) to be significantly reduced. Thisultra-miniature form factor is important for several reasons.

For example, the ultra-miniature form factor allows for implantation ofthe MEMS implant through an injector, syringe, or like delivery systemshaving a gauge of 19 (e.g., inner diameter of approximately 690 microns)or higher (e.g., up to 28 or 29 gauge). This in turn enables arelatively quick, easy, and safe implantation procedure in an outpatientenvironment (e.g., 5-10 minutes of surgical time), such as thephysician's office, without major invasive surgery which likely resultsin significant savings to the health system and reduced patientcomplications. Further, the reduced invasiveness of an injectablepressure sensor implant allows for diagnosis of not only glaucomapatients, but also pre-glaucoma patients. Early diagnosis and follow-upmedical therapy could prevent complicated glaucoma surgery (e.g., lasersurgery, trabeculectomy, valve implants), vision impairments, and/orblindness in the later years. As most ophthalmologist are well trainedin injectables for drug therapies, such as injection of anti-VEGF drugsassociated with treatment of age related macular degeneration, adoptionof injectable pressure sensor implants should also be relatively wellaccepted.

Another benefit of the ultra-miniature form factor is that it allows theMEMS implant to be safely and effectively implanted entirely within adesired location within the eye so as to directly measure IOP levels.Accurate IOP profiles are beneficial for guiding appropriate, safe, andeffective therapies for glaucoma control and management, which mayinclude therapeutic pharmaceuticals, implantable shunt or drainagedevices, glaucoma surgery, and/or the like. Such implantable IOPpressure sensors further monitor patients for continued compliance withthe prescribed treatments, which can be particularly of benefit inmedically controlled IOP patients.

It will be appreciated, however, that the implant devices of the presentinvention are not limited to solely the ophthalmology space and thediagnosis and treatment of glaucoma, but may find beneficial applicationin several other medical fields where it is desirable to have anultra-miniature, injectable implant that provides diagnostic transducermeasurements accurately, adjustably, and continuously. For example, suchother physiological applications include but are not limited to sensingof an intracranial pressure, a cardiovascular pressure at a locationsuch as the pulmonary artery, and monitoring of glucose, urologyparameters such as abdominal compartment syndrome diagnosed with bladderpressure, eye motion controlled or uncontrolled with conditions likehorizontal, vertical or torsional nystagmus, or acute compartmentsyndrome when a patient is under severe trauma condition such broken legwhich is causing excessive pressure builds up inside an enclosed space(measured in terms of strain) within the muscle tissue such as arms,legs. At least some of these physiological sensors may utilize one ormore additional sensors on the implantable sensor device.

In many embodiments of the present invention, vertically stacked andhermetically sealed implantable pressure sensor devices for measuring aphysiological signal of a patient or animal are described. Theimplantable device comprises a first wafer and a second wafer. The firstwafer comprises at least a pressure sensor configured to measure thephysiological signal. The second wafer comprises at least a digitizingintegrated circuit. The first wafer is vertically stacked or disposedover the second wafer so as to form a hermetic seal. In particular, thevertical stacking of the wafers is configured to create a hermeticallysealed cavity between the first and second wafers.

This vertical stacking architecture design and construction, which isdescribed in greater detail below, allows for the implant to define itsown hermetic package and significantly reduce its form factor so as tobe easily implanted as an injectable and within a desired locationwithin the eye. In particular, the implantable device may comprise asize or shape capable of implantation through an injector or syringehaving a gauge of 19 or higher. The implantable device may also be sizedor shaped to be positionable within a vitreous body of an eye so as tomeasure an IOP of a vitreous humour which provides a safe region withinthe physiology of the eye. Other locations such as the anterior chamberwhere the aqueous humour accumulated can be also directly monitored butat a greater risk to impair the vision of the patient. Monitoring theanterior chambers directly is not worth the risk of affecting visionsignificantly or the associated liability. Even if there were a slightdegradation or attenuation in IOP when measuring within the vitreoushumour, the increased pressure may be detected with a continuouspressure profile that will satisfactorily quantify the increase inpressure. The proposed measurement locations can be readily validatedacross a range of animal models, which may also be used to adjust thesensor sensitivity if necessary.

The pressure sensor of the implantable device may comprise a capacitivepressure transducer. In some embodiments, the device includes anabsolute reference with a vacuum within the transducer and may include adifferential mode using two capacitors for sensing and reference,respectively. It will be appreciated however that the first wafer mayincorporate other types of sensors or transducers, such as anaccelerometer or piezoelectric, depending on the desired physiologicalsignal for measurement and sensing. The capacitive pressure transducercomprises at least a first cavity structure and a second cavitystructure, wherein the at least first cavity is distal of the at leastsecond cavity. The at least first cavity is under vacuum so as measurethe physiological signal, such as IOP, while the at least a secondcavity structure is configured to measure a reference pressure of onemore parameters other than the IOP so that it is independent of theactual IOP measured by the at least first cavity. The second cavity hasalso vacuum but the membrane has a reduced area to significantly reducethe sensitivity to pressure but with the same electrical characteristic(e.g. capacitance).

The second wafer further comprises a radio frequency link, powerstorage, and data storage. Alternatively, such elements may beincorporated into a third wafer comprising at least a second digitizingintegrated circuit, wherein the second wafer is vertically stacked ordisposed over the third wafer. Each wafer comprises a maximum thicknessof about 200 microns or less, and more particularly a maximum thicknessof about 125 microns or less. In some examples, the first wafer has agreater thickness than the second wafer so as provide for sufficientrigidity of the pressure sensor, while in other examples each wafer canhave substantially the same thickness. The implantable device maycomprise a maximum thickness of about 650 microns or less, a maximumlength of about 4 mm or less, and a width of 650 microns or less, andmore particularly a maximum thickness of about 600 microns or less, amaximum length of about 3 mm or less, and a width of 600 microns orless. In some embodiments, the device dimensions are about 520 um inwidth and 450 um in thickness, which can be reduced by at least 20% forsmaller gauge syringe. In one aspect, the sensor device is dimensionedso as to be inserted through the sclera, which at the pars plana isabout 0.5 m thick +/−0.2 mm, and protrude about 2 mm into the vitreoushumour so as to fully expose the sensor (e.g. sensing capacitor) withinthe vitreous humour. Although in some embodiments, the width andthickness may be about the same the width may be independent ofthickness. For example, in some embodiments, the sensor device may havea thickness less than a width so as to maximize the circuit area of anintegrated circuit wafer of the sensor device.

The first and second wafers may be formed from substrate materialshaving matched or unmatched temperature coefficients of expansion.Further, if both wafers have different coefficients of thermal expansionat least one stress isolation feature may be incorporated into the firstwafer to mechanically decouple the pressure sensor from the secondwafer. Typically, all electrical connections are located on a bottom orback side of the first and second wafers so as to provide an appropriateelectrical interface between the transducer (capacitive device) and theinput stage of signal conditioning electronic or between the inductivedevice (coil) and the input/output of the telemetry circuit transferringdata and power with the external acquisition system.

As discussed above, the vertical stacking of the wafers is configured tocreate a hermetically sealed cavity between the first and second wafers.In one example, a sealing ring is disposed between the first and secondwafers and is configured to hermetically seal the first and secondwafers. A dielectric layer may be disposed over the implantable deviceto electrically isolate and encapsulate the first and second wafer andprovide an adhesion layer. Additionally or alternatively, a titaniumbarrier may be disposed over the dielectric layer or the implantabledevice so as to further hermetically encapsulate the first and secondwafers. A biocompatible polymer coating may be disposed over thetitanium barrier. The present invention provides redundant hermeticsealing to ensure chronic implantation so as to provide long-term stableand continuous IOP measurements and profiles for time periods of monthsto years (e.g., 1, 5, 10, or 15 years). Due the potential impact on thesensitivity of the transducer, the thickness of the layers deposited orcoated on top of the sensing area with the diaphragm should becontrolled and/or minimized (e.g. thinner oxide, Ti layer andfunctionalized polymer layer). This is not the case in other areas, suchas a Reference capacitor and inductive antenna coil (e.g. differentialdipole), which do not present mechanical sensitivity and designed toaddress required electrical characteristics (e.g. shunt capacitor,etc.).

A vertically stacked implantable device for directly measuring an IOP ofan eye comprises a first wafer and a second wafer. The first wafercomprises at least a pressure transducer configured to directly measurethe IOP of the eye. The second wafer comprises at least a digitizingintegrated circuit. The first wafer is vertically stacked or disposedover the second wafer. The implantable device is sized or shaped to bepositionable within a vitreous body of an eye so as to measure the IOPof a vitreous humour.

At least one power receiving and/or data transmission coil is verticallystacked or disposed over the first wafer and a second cavity of thepressure transducer (e.g., reference diaphragm) while a first cavity ofthe pressure transducer (e.g., sensing diaphragm) remains exposed.Typically, the pressure transducer has an operating range from −150 mmHGto 250 mmHG around atmospheric pressure (also called common mode of fullscale) which will measure a gauge pressure of 0 to +30 mmHg (defined asabsolute IOP pressure minus the external atmospheric pressure, moreparticularly in a common mode range from −100 mmHG to +200 mmHG. In someembodiments, an interposer may be disposed below the second wafer. Theinterposer comprises anchoring means, a distal tissue penetrating tip,and/or an extraction feature. The interposer can also be configured as abottom wafer acting a boat layer or support adapted to support or holdthe 3D stack of wafers, such as the four wafer design described herein(e.g. MEMS/ASIC/Supercap/Battery). In some embodiments, the boat layeris included as a mechanical layer which functions to anchoring the stackto the sclera and is not required to provide any electrical function.The interposer may further comprise at least one capacitor forsupplemental energy storage and/or at least one coil configured toreceive power and/or transmit data. This super-capacitor may be definedwith dielectric layer and top/bottom plates that could be defined withmultiple layers to increase area capacitance density.

An injectable intraocular pressure sensor system comprises afluid-filled syringe or injector and an implantable IOP sensor device.The IOP device comprises a first wafer and a second wafer. The firstwafer comprises at least a pressure transducer configured to directlymeasure the intraocular pressure of the eye. The second wafer comprisesat least a digitizing integrated circuit. The first wafer is verticallystacked or disposed over the second wafer. The injector or syringecomprises a gauge of 19 or higher and may be filled with biocompatiblefluids, such as saline and the like.

The details of one or more implementations are set forth in theaccompanying drawings and the description below. Other features will beapparent from the description and drawings, and from the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A through 1D are isometric views of a vertically stackedimplantable device according to embodiments of the present invention.

FIGS. 1E and 1F illustrate cross sectional side views of the verticallystacked implantable device of FIG. 1A.

FIG. 1G illustrates a top view of the vertically stacked implantabledevice of FIG. 1A.

FIGS. 2A and 2B illustrate top views of a MEMS based pressure sensor ofthe implantable device of FIG. 1A with and without a membrane layer.

FIG. 2C illustrates a MEMS capacitive pressure transducer of theimplantable device of FIG. 1A.

FIG. 2D illustrates a cross sectional view of the MEMS capacitivepressure transducer of the implantable device of FIG. 1A.

FIGS. 3A and 3B illustrate bottom view the MEMS based pressure sensor ofthe implantable device of FIG. 1A.

FIGS. 4A through 4C illustrate anchoring members of the implantabledevice of FIG. 1A.

FIGS. 4D and 4E illustrate an example coil and an overview of theimplantable device of FIG. 1A depicting the locations of variouscomponents, respectively.

FIG. 5 illustrates a cross sectional side views of the verticallystacked implantable device of FIG. 1A with power receiving and/or datatransmission coil.

FIGS. 6A and 6B illustrate cross sectional front views of a verticallystacked implantable device according to embodiments of the invention.

FIGS. 7A-7C illustrate several views of an alternative design of avertically stacked implantable device according to embodiments of theinvention.

FIGS. 8A-8E illustrate a fabrication process for a sensor device inaccordance with embodiments of the invention.

FIG. 9 illustrates a flowchart for assembly of a sensor device inaccordance with embodiments of the invention.

FIG. 10A-B illustrate a schematic of a reduced width design of a sensordevice in accordance with embodiments of the invention.

FIG. 10C illustrates a displacement model of a membrane of the sensorand reference capacitors of the sensor device in FIG. 10A.

FIG. 10D illustrates a die design of the sensor device design in FIG.10A.

FIG. 11A illustrate a schematic of an alternative reduced width designof a sensor device in accordance with embodiments of the invention.

FIG. 11B illustrates a displacement model of a membrane of the sensorand reference capacitors of the sensor device of FIG. 11A.

FIG. 12 illustrates a schematic of the electrical connections associatedwith a supercapacitor and thin-film battery layer of a sensor devicecomprised of vertically stacked wafers in accordance with embodiments ofthe invention.

FIGS. 13 and 14 illustrate application specific integrated circuit(ASIC) block diagrams for sensor devices in accordance with embodimentsof the invention.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments of the present invention provide improved MEMS basedpressure sensor implants for accurate and continuous measurement of IOPthat can be beneficial in the treatment of eyes, for example beneficialin the treatment of glaucoma. FIGS. 1A and 1B illustrate isometric viewsof a vertically stacked implantable pressure sensor device 10 formeasuring IOP according to embodiments of the present invention. Theimplantable device 10 comprises vertically stacked heterogeneouscomponents, namely a first MEMS wafer or die 12 and a second CMOS waferor die 14. The first wafer 12 comprises at least a pressure sensorconfigured to measure IOP on a frequent or desired basis (e.g., 1 sampleper hour, 2-4 samples per day, etc.). The second wafer 14 comprises atleast a digitizing ASIC. In some embodiments, the ASIC includes amicrocontroller to enable firmware update of the implant, customizationof sampling function (rate/window, accuracy, resolution, etc.),auto-adaptative sampling to measured pressure, built-in self-test, errordetection and correction, embedded diagnostics, broad use models withon-demand sample, streaming data and autonomous mode. The first MEMSwafer 12 is vertically stacked or disposed over the second CMOS wafer 14so as to form a first hermetic seal. In particular, the verticalstacking of the wafers is configured to create a hermetically sealedcavity 16 (as shown in FIG. 5) between the MEMS 12 and CMOS wafers 14 ofthe implantable device 10. In some embodiments, the stack includes oneor more additional wafers, for example one or more wafers adapted foruse as a power source. Such embodiments may include a third wafer thatincludes a supercapacitor. In some embodiments, the stack furtherincludes a fourth wafer that includes a battery. Such embodiments mayutilize a power management scheme switching between the supercapacitorand battery in order to prove more efficient power discharge from a highimpedance thin-film battery, such as a LiPON battery. An example of sucha configuration is shown in the embodiment in FIGS. 7A. As can be seenin the cross-sections A-A and B-B in FIGS. 7B and 7C, respectively, thestacked sensor device of FIG. 7A includes the MEMS 12 and CMOS wafers14, a decoupling capacitor wafer 13 and a thin film battery/energystorage wafer 15. In one aspect, the wafers of the stack may be bondedtogether with low temperature Gold-Indium (Au—In) bond, while thecavities are formed using a silicon-to-silicon fusion bond. Thisconfiguration provides improved thermal budget management, while thesilicon-to-silicon fusion bond provides long term vacuum stability (e.g.greater than 20 years). In this embodiment, rather than an interposerlayer 18, the stacked device is placed within a support structure orboat 19.

This approach of wafer or die stacking is sometimes referred to as“chipscale packaging” within the electronics manufacturing field.Chipscale packaging is well understood by those of skill in the art inthe MEMS/CMOS manufacturing industry, and is of particular benefit tothe present invention in enabling production of smaller, integratedwafer assemblies that are easier to manufacture, provide improvedperformance, and are less expensive. In particular, constructing theimplantable device 10 based on this vertical stacking approach allowsfor the implant form factor (e.g., dimension, size, shape, volume, etc.)to be significantly reduced (e.g., by a factor of 10×). Conventionalimplants typically require titanium, ceramic, glass or like outerpackaging, which adds to the overall size and bulkiness of suchconventional implants. The present invention advantageously employsvertical stacking to define its own hermetic package, which encapsulatesall the electronics. As such, the implant 10 architecture and resultingform factors allow it to be easily implanted as an injectable and withina desired location within the eye of a patient.

As described in greater detail in co-pending U.S. Pat. No. 10,213,107,entitled “Methods and Devices for Implantation of Intraocular PressureSensors”, the implantable device 10 is sized and/or shaped to bepositionable within a vitreous body of an eye so as to measure an

IOP of a vitreous humour. It will be appreciated however that theimplant may be positioned in alternative eye structures, such as theanterior chamber, posterior chamber, suprachoroidal space, sclera,and/or cornea, or in other anatomical locations outside the eye formeasurement of physiological signals other than IOP. As shown in FIGS.1C and 1D, an anchoring interposer wafer or die 18 may be disposed belowthe CMOS wafer 14. The interposer 18 may have a distaltissue-penetrating tip 20 to help facilitate final positioning of theimplant device 10 within the vitreous body to minimize trauma and/orformation of scar tissue at the site of implantation.

Referring to FIGS. 1E and 1F, cross sectional side views of thevertically stacked implantable device 10 are shown while FIG. 1Gillustrates a top view. Generally, the implantable device 10 isdimensioned (e.g., thickness, width) to correspond to an inner diameterof a syringe having a gauge of 19 or higher for injectability purposes.Further, the implantable device 10 is generally dimensioned (e.g.,length) so as to allow the implanted device 10 to reach the desiredsensing location through the tissue thickness from where it is anchored.For example, positioning the implantable device 10 within the vitreousbody and anchoring the implant against the sclera requires an implantlength of about 4 mm. Generally, the implantable device 10 may comprisea maximum thickness T of about 690 microns or less, a maximum length L1of about 4 mm or less, and a width W of 690 microns or less. Inparticular, the device without the interposer wafer 18 may have amaximum length L2 of about 4 mm or less (FIG. 5). The MEMS wafer 12 mayhave a greater thickness than the ASIC wafer 14 and/or interposer wafer18 so as provide for sufficient rigidity of the pressure sensor.Alternatively, each wafer may have substantially the same thickness. TheMEMS wafer 12 may have a first thickness T1 of about 200 microns orless, the ASIC wafer 14 may have a second thickness T2 of about 200microns or less, and the interposer wafer 18 may have a third thicknessT3 of about 200 microns or less.

Referring to FIGS. 2A and 2B, the pressure sensor 12 of the implantabledevice 10 may comprise an active electrode in the form of a capacitivepressure transducer. FIG. 2A illustrates a top view of the MEMS wafer 12of the implantable device 10 with a diaphragm membrane layer 22, whileFIG. 2B illustrates the MEMS wafer 12 with the diaphragm membrane layer22 removed. The capacitive pressure transducer comprises at least afirst cavity structure 24 (e.g., sensing capacitor) and a second cavitystructure 26 (e.g., reference capacitor), wherein the sensing capacitor24 is distal of the reference capacitor 26. As shown in FIGS. 2C and 2D,the sensing capacitor 24 (or reference capacitor 26) may comprises abase honeycomb structure 28 having multiple cavities 30 (e.g., 4 to 6cavities) so as to increase the surface area available for measurementand reduce internal stress areas.

Each cavity 30 of the sensing capacitor 24 is under vacuum 32 (e.g.,gaseous pressure that is less then atmospheric pressure) through bondingof a SOI device layer so that deformation of the membrane 22 undervacuum provides an accurate IOP measurement. In some embodiments, thereference capacitor 26 is without vacuum (e.g., cavity filled withoxide) so as to measure a reference pressure of one more parametersother than the IOP (e.g., variations due to stress, temperature, etc.)so that it is independent of the actual IOP measured by the sensingcapacitor 24. In other embodiments, both the sensing and referencecavities have a vacuum but are different mechanically. For example, in areference capacitor 26 which also has a vacuum, in order to remove thesensitivity to pressure, the membrane can be made smaller to increasestiffness but the capacitance is the same for closer matching when usedin differential mode (C_(sense)/C_(ref)). Examples of suchconfigurations having reference electrodes of reduced width are shown inthe embodiments of FIGS. 10A and 11A. It is appreciated that thedimensions shown in the embodiments in FIGS. 10A and 11A are merelyexamples of device dimensions and should be noted that such devices maybe fabricated according to various other dimensions in accordance withembodiments of the invention. For example, any of the dimensions shownmay be scaled upwards or downwards (e.g. by 5%, 10%, 20%, etc.) asdesired for a particular application. As can be seen in the displacementmodels in FIGS. 10C and 11B, the membrane of the reference electrode ofreduced width has increased stiffness such that its displacement inresponse to a change in pressure is considerably less than that of thepressure sensor electrode. The reference capacitor 26 is positionedwithin the vicinity of sensing capacitor 24 in order to accuratelycancel out noise signals or other artifacts that alter the sensingmeasurements. Additionally, the reference and/or sensing capacitors 24,26 may have a post 34 centered therein so as to prevent the topreference and/or sensing membranes 22 from contacting the base structure28. The pressure transducer will have the sensing capacitor 24 and thereference capacitor 26 with a common node, such as the bulk wafer 12.Typically, the pressure transducer has a full scale range from −100 mmHgto 200 mmHg, compare to 1 Atm (760 mmHg), and more particularly in arange from 660 mmHg to 960 mmHg (absolute). FIG. 10D illustrates a diedesign schematic showing the electrical connections between the sensorand reference electrodes to the one or more power source/energy storagewafers.

FIGS. 3A and 3B illustrate bottom views of the MEMS based pressuresensor 12 of the implantable device 10. In particular, electrical pads36 provide a common node connection to electrically connect the MEMSwafer 12 to the ASIC wafer 14 to ground. Typically, vertical electricalconnections (e.g., isolated through silicon via (TSV)) are providedbetween all components (e.g., pressure sensor 12, digitizing ASIC 14,and/or interposer 18) and are located on a bottom or back side of thewafers so as to provide an appropriate interface to a media (e.g.,vitreous humour) to be measured and minimize parasitic effects.

Referring now to the embodiments in FIGS. 4A through 4C, the anchoringinterposer wafer 18 of the implantable device 10 is further illustrated.The anchoring wafer 18 may be disposed below the CMOS wafer 14 andcomprise anchoring means 38, a distal tissue penetrating tip 20, and/oran extraction feature 40. The anchoring means 38 may compriseself-expanding anchoring legs, spring loaded fixation elements, or thelike. The devices of the present invention may be temporary or permanentimplants 10 that can be useful for both short term (e.g., days ormonths) and/or long term IOP monitoring of the eye (e.g., months toupwards of 10 years or more). In the case of short term monitoring or anadverse event, the implantable device 10 may be easily explanted via theextraction feature 40 on the anchoring wafer 18. The anchoring wafer 18may further comprise at least one energy storage capacitor (29 in FIG.4D) to extend energy storage of the implantable device 10 and/or atleast one coil or antenna (not shown) configured to wirelessly receivepower and/or transmit data with an external base station. The energystorage capacitor may be formed in the anchoring wafer or may be formedin separate layer or formed separately and attached to the device invarious locations. It will be appreciated that the interposer wafer 18may also be omitted from the implantable pressure stack 10 if it isdirectly incorporated within a therapeutic structure, such asimplantable shunt, valve, stent, or drainage devices.

In some embodiments, the anchoring structure is formed in a separatesupport structure or “boat” in which the diced multi-wafer stack isplaced and attached with low temperature metal alloy. An example of sucha “boat” can be seen in the embodiment of FIG. 7A. In some embodiments,this support structure or boat may also include a distally tapered tip20 to facilitate penetration through the sclera during implantation andmay also include one or more anchoring features 38. Such features may beincluded as components with a mechanical function that clamps onto thesclera (e.g., a proximal and distal anchor on opposite sides of thesclera). The anchoring feature may also include an anchoring loop orextensions. Such anchoring features may be formed of Silicon, Titanium,shape memory alloy, or other suitable materials. In some embodiments,the boat is formed of a monolithic material and include side-walls thatextend upwards, at least partly, along a thickness dimension of thestacked sensor device 10. The fabrication/assembly of a sensor deviceusing a boat component having a distally tapered tip 20 and proximal anddistal anchoring features 38 is illustrated in FIGS. 8A-8E.

A simplified flowchart of the assembly is shown in FIG. 9. In thismethod, the fabrication process flow for each wafer are performed andthe wafer assembled in the sequence depicted. In this example, thesensor and ASIC may utilized a shared flow 71 or may utilize flows inparallel 71 a, 71 b, while the anchor structure flow 72 and the energystorage flow 73 are fabricated in separate process flows on separatestructures or wafers. The sensor, ASIC and energy storage wafers areassembled 74 and assembled with the anchor structures to form the fullyassembled IPO sensor device 75.

Referring now to FIG. 5, a cross sectional side view of the verticallystacked implantable device 10 is shown. In particular, at least one coilor circuitry 42 is illustrated for wireless charging of the battery-lessimplant and data communication with an external base station (e.g.,glasses, phone, etc.). Details of the wireless interface are describedin more detail in co-pending U.S. Patent Publn No. 2016/0058324,entitled “Ultra Low Power Charging Implant Sensors With WirelessInterface for Patient Monitoring.” In this figure, the least one coil 42is vertically stacked or disposed over the first wafer 12 and thereference capacitor 26 while the distally positioned sensing capacitor24 (FIG. 2B) remains exposed and entirely disposed within the vitreousbody for accurate and direct IOP measurements. The coil 42 may bedefined in terms of topology to provide the highest inductance, which isdependent on the depth of implantation and energy transfer efficiency.The first phase of operation may be recharging of the implant 10 whilethe second phase may be data transfer to recover and record logged data.An overview schematic of the example implantable device of FIG. 1A isshown in FIG. 4E, which depicts the locations of the coil 42, referencecapacitor 26 and sensing capacitor 36 on the device. It is appreciatedthat various other configurations may be used in accordance with theaspects of the present invention described herein.

As described above, vertical stacking of the implant 10 is configured tocreate a hermetically sealed cavity 16 between the MEMS and ASIC wafers12, 14. For example, a gold sealing ring 46 or flange may be disposedbetween the first and second wafers to create this first hermetic sealbetween the MEMS 12 wafer and ASIC 14 wafer. The implant may furtherincorporate a second hermetic seal by depositing a dielectric layer,such as silicon dioxide, over the implantable device and a titaniumbarrier over the deposited dielectric layer for a third hermeticbarrier. This redundant hermetic sealing ensures chronic implantationand provides enhanced sensing stability. Still further, a biocompatiblepolymer coating, such as parylene, polymethyl methacrylate (PMMA), andlike polymers, may be disposed over the titanium barrier to minimize anyimmune system response (e.g., rejection of implant).

The ASIC wafer 14 may further comprise a radio frequency link, powerstorage, and/or data storage so as to maximize the wafer topology alongits length and reduce the manufacturing complexity and costs of thestacked implant 10. FIG. 13 illustrates an ASIC block diagramillustrating the various functions of the ASIC wafer 14, such as signalprocessing, ADC, energy/power management, data acquisition and logging,radio frequency link, calibration, etc. The implantable device 10 may beentirely formed from the same substrate material, preferably siliconwafers or dies and have rounded or anti-traumatic edges to minimize anycollateral tissue damage during positioning or implantation. Theapproach of using silicon material throughout the wafer stack (MEMS 12,ASIC 14, interposer 18) offers matching of the coefficient of thermalexpansion (CTE) between the layers, which enables the mechanicalstability of the overall implant 10 and reduces measurement drift. Thepressure transducer 12 may also be embedded with mechanical stressisolation features 44 to decouple any intrinsic stress associated withthe vertical stacking architecture, and in particular the TSV electricalconnections and/or sealing ring 46. In particular, at least one stressisolation feature 44 may be incorporated into the MEMS wafer 12 tomechanically decouple the pressure sensor from the ASIC wafer 14. FIG.14 illustrates a functional block diagram performed by the ASIC 14 in asensor device equipped with a thin-film solid state battery 15 inaccordance with embodiments described herein.

FIGS. 6A and 6B illustrate cross sectional front views of a verticallystacked implantable device 48 according to embodiments of the presentinvention. FIG. 6A illustrates the pressure transducer wafer 12 over adual ASIC stack 50, 52 as another option to provide a smaller implantfootprint depending on desired location and/or anchoring of implant. Thefirst ASIC wafer 50 may comprises components such as ADC, calibration,and data acquisition and logging. The second ASIC 52 may comprises aradio frequency link, power storage, and/or data storage. The anchoringinterposer 18 may be disposed between the first and second ASIC wafers50, 52. The implantable device 48 further comprises two verticallystacked coils 58, 60 disposed under the second ASIC 52 or aninterdigitated double-coil, such as that shown in FIG. 4D. While theillustrated coil is shown with a glass substrate, typically a highaspect ratio dielectric polymer (polyimide, parylene, etc.) is used toform the coil shape around a gold conductor, although it is appreciatedthat the coil(s) may be formed using various other materials andaccording to other configurations. In certain embodiments utilizing adouble coil, the first coil 58 may be utilized for power receipt whilethe second coil 60 may be configured for data transmission. In oneaspect, a larger inductive coil may be attached if desired to increasethe antenna side for improved coupling so as to allow for higher energyharvesting. Such a coil could be attached on the backside of the deviceor included at various different locations on the sensor device so longas its placement would not interfere with pressure measurements by thesensing capacitor.

FIG. 6B illustrates the implantable device 48 within a fluid-filleddelivery syringe 54 for implantation by injection into the eye. In someembodiments, the implantable device 48 is sized so that it is capable ofimplantation through the inner diameter of the injector or syringe 54having a gauge of 19 or higher. Preferably, the syringe 54 will befilled with biocompatible fluids 56, such as saline and the like, whichhelps protect the fragile pressure sensor membrane 22 of the MEMS wafer12 from any inadvertent damage during implantation and further aids inpositioning the implantable device 48 at the desired implantation sitewithin the eye.

In the foregoing specification, the invention is described withreference to specific embodiments thereof, but those skilled in the artwill recognize that the invention is not limited thereto. Variousfeatures and aspects of the above-described invention can be usedindividually or jointly. Further, the invention can be utilized in anynumber of environments and applications beyond those described hereinwithout departing from the broader spirit and scope of thespecification. The specification and drawings are, accordingly, to beregarded as illustrative rather than restrictive. It will be recognizedthat the terms “comprising,” “including,” and “having,” as used herein,are specifically intended to be read as open-ended terms of art.

What is claimed is:
 1. A vertically stacked and hermetically sealedimplantable pressure sensor device for measuring a physiological signal,the implantable device comprising: a first wafer comprising at least apressure sensor configured to measure the physiological signal; and asecond wafer comprising at least a digitizing integrated circuit,wherein the first wafer is vertically stacked or disposed over thesecond wafer so as to form a hermetic seal.
 2. The implantable device ofclaim 1, wherein the vertical stacking of the wafers is configured tocreate a hermetically sealed cavity between the first and second wafers.3. The implantable device of claim 1, wherein the implantable devicecomprises a size or shape capable of implantation through an injector orsyringe having a gauge of 19 or higher.
 4. The implantable device ofclaim 1, wherein the physiological signal comprises an intraocularpressure, an intracranial pressure, or a cardiovascular pressure.
 5. Theimplantable device of claim 4, wherein the implantable device is sizedor shaped to be positionable within a vitreous body of an eye so as tomeasure an intraocular pressure of a vitreous humour.
 6. The implantabledevice of claim 1, wherein the pressure sensor comprises a capacitivepressure transducer, wherein the capacitive pressure transducercomprises at least a first cavity structure having a membrane, whereinthe first cavity is under vacuum such that the physiological signalcomprises a pressure measurement.
 7. The implantable device of claim 6,wherein the capacitive pressure transducer further comprises at least asecond cavity structure having a membrane, wherein the second cavity isunder vacuum and the membrane has a stiffness higher than that of thefirst cavity structure so as to be less sensitive to pressure such thata signal obtained from the second cavity comprises a referencemeasurement for comparison with the pressure measurement.
 8. Theimplantable device of claim 1, wherein the second wafer furthercomprises any of radio frequency link, power storage, and data storage9. The implantable device of claim 1, wherein each wafer comprises amaximum thickness of about 200 microns or less.
 10. The implantabledevice of claim 1, wherein each wafer has substantially the samethickness.
 11. The implantable device of claim 1, wherein the firstwafer has a greater thickness than the second wafer.
 12. The implantabledevice of claim 1, wherein the implantable device comprises a maximumthickness of about 200 microns or less, a maximum length of about 4 mmor less, and a width of 650 microns or less.
 13. The implantable deviceof claim 1, wherein the first and second wafers are formed fromsubstrate materials having matched temperature coefficients of expansionor wherein the first and second wafers comprise the same material. 14.The implantable device of claim 1, further comprising at least onestress isolation feature incorporated into the first wafer tomechanically decouple the pressure sensor from the second wafer.
 15. Theimplantable device of claim 1, further comprising a sealing ringdisposed between the first and second wafers configured to hermeticallyseal the first and second wafers.
 16. The implantable device of claim15, further comprising a dielectric layer disposed over the implantabledevice to electrically isolate and encapsulate the first and secondwafer and provide an adhesion layer.
 17. The implantable device of claim16, further comprising a titanium barrier disposed over the dielectriclayer so as to further hermetically encapsulate the first and secondwafers, further comprising a biocompatible polymer coating disposed overthe titanium barrier.
 18. The implantable device of claim 1, wherein allelectrical connections are located on a bottom or back side of the firstand second wafers so as to provide an interface to a media which isisolated from any electrical connection.
 19. The implantable device ofclaim 1, further comprising a third wafer having a capacitor, whereinthe second wafer is vertically stacked or disposed over the third wafer.20. The implantable device of claim 1, further comprising a fourth waferhaving a thin-film battery, wherein the third wafer is verticallystacked or disposed over the fourth wafer.